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mmg75s120b6tn.pdf Principales características:

MMG75S120B6TN 1200V 75A IGBT Module April 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS High frequency switching application Medical applications Motion/servo control UPS systems IGBT-inverter ABSOLUTE MAXIMUM RATINGS T =25 C unless otherwise specified C Symbol Parameter/Test Conditions Values Unit VCES Collector Emitter Voltage TJ=25 1200 V VGES Gate Emitter Voltage 20 TC=25 105 IC DC Collector Current TC=80 75 A ICM Repetitive Peak Collector Current tp=1ms 150 Ptot Power Dissipation Per IGBT 348 W Diode-inverter ABSOLUTE MAX

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 mmg75s120b6tn.pdf Design, MOSFET, Power

 mmg75s120b6tn.pdf RoHS Compliant, Service, Triacs, Semiconductor

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