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mmg800k120u6hn.pdf Principales características:

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MMG800K120U6HN 1200V 800A IGBT Module June 2015 Version 01 RoHS Compliant PRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses 5K Gate Protected Resistance Inside APPLICATIONS High frequency switching application Medical applications Motion/servo control UPS systems IGBT-inverter ABSOLUTE MAXIMUM RATINGS T =25 C unless otherwise specified C Symbol Parameter/Test Conditions Values Unit VCES Collector Emitter Voltage TJ=25 1200 V VGES Gate Emitter Voltage 20 TC=25 1050 IC DC Collector Current TC=75 800 A ICM Repetitive Peak Collector Current tp=1ms 1600 Ptot Power

 

Keywords - ALL TRANSISTORS. Principales características

 mmg800k120u6hn.pdf Design, MOSFET, Power

 mmg800k120u6hn.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mmg800k120u6hn.pdf Database, Innovation, IC, Electricity

 

 
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