Todos los transistores

mmgtu75j120u.pdf Principales características:

MMGTU75J120U 1200V 75A IGBT Module July 2015 Version 0 RoHS Compliant PRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Popular SOT-227 Package APPLICATIONS High frequency switching application Medical applications Motion/servo control UPS systems UPS systems IGBT-inverter ABSOLUTE MAXIMUM RATINGS T =25 C unless otherwise specified C Symbol Parameter/Test Conditions Values Unit VCES Collector Emitter Voltage TJ=25 1200 V VGES Gate Emitter Voltage 20 TC=25 100 IC DC Collector Current TC=80 75 A ICM Repetitive Peak Collector Current tp=1ms 150 Ptot Power Dissipation Per IGBT 410 W Diode-inverter ABSOLUTE MAXIMUM RATINGS T =25 C unless otherw

Keywords - ALL TRANSISTORS. Principales características

 mmgtu75j120u.pdf Design, MOSFET, Power

 mmgtu75j120u.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mmgtu75j120u.pdf Database, Innovation, IC, Electricity