Todos los transistores

 

apt20gn60bg apt20gn60sg.pdf Principales características:

apt20gn60bg_apt20gn60sgapt20gn60bg_apt20gn60sg

TYPICAL PERFORMANCE CURVES APT20GN60B_S(G) APT20GN60B APT20GN60S APT20GN60B(G) APT20GN60S(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra (B) low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a D3PAK slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses. (S) C G E G 600V Field Stop C E Trench Gate Low VCE(on) Easy Paralleling C 6 s Short Circuit Capability 175 C Rated G E Applications Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Parameter Symbol UNIT

 

Keywords - ALL TRANSISTORS. Principales características

 apt20gn60bg apt20gn60sg.pdf Design, MOSFET, Power

 apt20gn60bg apt20gn60sg.pdf RoHS Compliant, Service, Triacs, Semiconductor

 apt20gn60bg apt20gn60sg.pdf Database, Innovation, IC, Electricity

 

 
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