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2n3905 2n3906.pdf Principales características:

2n3905_2n39062n3905_2n3906

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N3905/D General Purpose Transistors 2N3905 PNP Silicon * 2N3906 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit CASE 29 04, STYLE 1 Collector Emitter Voltage VCEO 40 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 40 Vdc Emitter Base Voltage VEBO 5.0 Vdc Collector Current Continuous IC 200 mAdc Total Device Dissipation @ TA = 25 C PD 625 mW Derate above 25 C 5.0 mW/ C Total Power Dissipation @ TA = 60 C PD 250 mW Total Device Dissipation @ TC = 25 C PD 1.5 Watts Derate above 25 C 12 mW/ C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS* Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case R

 

Keywords - ALL TRANSISTORS. Principales características

 2n3905 2n3906.pdf Design, MOSFET, Power

 2n3905 2n3906.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n3905 2n3906.pdf Database, Innovation, IC, Electricity

 

 
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