bc635 bc637 bc639.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

bc635 bc637 bc639.pdf Principales características:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC635/D High Current Transistors BC635 NPN Silicon BC637 BC639 COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 635 637 639 Rating Symbol Unit CASE 29 04, STYLE 14 TO 92 (TO 226AA) Collector Emitter Voltage VCEO 45 60 80 Vdc Collector Base Voltage VCBO 45 60 80 Vdc Emitter Base Voltage VEBO 5.0 Vdc Collector Current Continuous IC 0.5 Adc Total Device Dissipation @ TA = 25 C PD 625 mW Derate above 25 C 5.0 mW/ C Total Device Dissipation @ TC = 25 C PD 1.5 Watt Derate above 25 C 12 mW/ C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25