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irf540.rev3.2.pdf Principales características:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF540/D Product Preview IRF540 TMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 27 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS efficient design also offers a drain to source diode with a fast RDS(on) = 0.070 OHMS recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients. Avalanche Energy Specified D Source to Drain Diode Recovery Time Comparable to a Discrete Fa

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 irf540.rev3.2.pdf Design, MOSFET, Power

 irf540.rev3.2.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf540.rev3.2.pdf Database, Innovation, IC, Electricity