mgp15n60urev0.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

mgp15n60urev0.pdf Principales características:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP15N60U/D Product Preview MGP15N60U Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 220 termination scheme to provide an enhanced and reliable high 15 A @ 90 C voltage blocking capability. It also provides fast switching charac- 26 A @ 25 C teristics and results in efficient operation at high frequencies. 600 VOLTS Industry Standard TO 220 Package VERY LOW High Speed Eoff 67 mJ/A typical at 125 C ON VOLTAGE Low On Voltage 1.7 V typical at 8.0 A, 125 C Robust High Voltage Termination ESD Protection Gate Emitter Zener Diodes C G G C E CASE 221A 09, Style 9 E TO 220AB MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Rating Symbol Value Unit Collec