mgp4n60erev0.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

mgp4n60erev0.pdf Principales características:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP4N60E/D Designer's Data Sheet MGP4N60E Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 220 termination scheme to provide an enhanced and reliable high 4.0 A @ 90 C voltage blocking capability. Its new 600 V IGBT technology is 6.0 A @ 25 C specifically suited for applications requiring both a high tempera- 600 VOLTS ture short circuit capability and a low VCE(on). It also provides fast SHORT CIRCUIT RATED switching characteristics and results in efficient operation at high LOW ON VOLTAGE frequencies. This new E series introduces an Energy efficient, ESD protected, and short circuit rugged device. Industry Standard TO 220 Package High Speed Eoff = 55 mJ/A typical at 125 C