mmbta55l mmbta56.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

mmbta55l mmbta56.pdf Principales características:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA55LT1/D Driver Transistors MMBTA55LT1 COLLECTOR PNP Silicon 3 MMBTA56LT1* *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 Rating Symbol MMBTA55 MMBTA56 Unit 1 Collector Emitter Voltage VCEO 60 80 Vdc 2 Collector Base Voltage VCBO 60 80 Vdc Emitter Base Voltage VEBO 4.0 Vdc CASE 318 08, STYLE 6 Collector Current Continuous IC 500 mAdc SOT 23 (TO 236AB) DEVICE MARKING MMBTA55LT1 = 2H; MMBTA56LT1 = 2GM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR 5 Board,(1) PD 225 mW TA = 25 C Derate above 25 C 1.8 mW/ C Thermal Resistance, Junction to Ambient RqJA 556 C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25 C Derate above 25 C 2.4 mW/ C Thermal Resistance, Junction to Ambient Rq