Todos los transistores

2sc1623.pdf Principales características:

DATA SHEET SILICON TRANSISTOR 2SC1623 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS High DC Current Gain hFE = 200 TYP. in millimeters (VCE = 6.0 V, IC = 1.0 mA) 2.8 0.2 High Voltage VCEO = 50 V 1.5 0.65+0.1 0.15 ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Current (TA = 25 C) 2 Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V 3 1 Emitter to Base Voltage VEBO 5.0 V Collector Current (DC) IC 100 mA Maximum Power Dissipation Total Power Dissipation Marking at 25 C Ambient Temperature PT 200 mW Maximum Temperatures Junction Temperature Tj 150 C Storage Temperature Range Tstg 55 to +150 C 1 Emitter 2 Base 3 Collector ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff

Keywords - ALL TRANSISTORS. Principales características

 2sc1623.pdf Design, MOSFET, Power

 2sc1623.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc1623.pdf Database, Innovation, IC, Electricity