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2sc3356.pdf Principales características:

2sc33562sc3356

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The 2SC3356 is an NPN silicon epitaxial transistor designed for low (Units mm) noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 2.8 0.2 1.5 0.65+0.1 -0.15 FEATURES Low Noise and High Gain 2 NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High Power Gain 3 1 MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO 20 V Marking Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 100 mA Total Power Dissipation PT 200 mW PIN CONNECTIONS Junction Temperature Tj 150 C 1. Emitter Storage Temperature Tstg 65 to +150 C 2. Base 3. C

 

Keywords - ALL TRANSISTORS. Principales características

 2sc3356.pdf Design, MOSFET, Power

 2sc3356.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc3356.pdf Database, Innovation, IC, Electricity

 

 
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