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mje350g.pdf Principales características:

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MJE350G Plastic Medium-Power PNP Silicon Transistor This device is designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability. www.onsemi.com Features High Collector-Emitter Sustaining Voltage 0.5 AMPERE Excellent DC Current Gain POWER TRANSISTOR Complement to MJE340 PNP SILICON These Devices are Pb-Free and are RoHS Compliant* 300 VOLTS, 20 WATTS MAXIMUM RATINGS COLLECTOR Rating Symbol Value Unit 2, 4 Collector-Emitter Voltage VCEO 300 Vdc Emitter-Base Voltage VEB 3.0 Vdc 3 Collector Current - Continuous IC 500 mAdc BASE Total Power Dissipation PD @ TC = 25_C 20 W 1 Derate above 25_C 0.16 mW/_C EMITTER Operating and Storage Junction TJ, Tstg 65 to +150 _C Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the dev

 

Keywords - ALL TRANSISTORS. Principales características

 mje350g.pdf Design, MOSFET, Power

 mje350g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mje350g.pdf Database, Innovation, IC, Electricity

 

 
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