mmbt3906lt1-d.pdf Principales características:
MMBT3906LT1G General Purpose Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO -40 Vdc 2 Collector-Base Voltage VCBO -40 Vdc EMITTER Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -200 mAdc 3 Collector Current - Peak (Note 3) ICM -800 mAdc 1 THERMAL CHARACTERISTICS 2 Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board PD SOT-23 (TO-236) (Note 1) @ TA = 25 C 225 mW CASE 318 Derate above 25 C 1.8 mW/ C STYLE 6 Thermal Resistance, Junction-to-Ambient RqJA 556 C/W MARKING DIAGRAM Total Device Dissipation Alumina PD Substrate, (Note 2) @ TA = 25 C 300 mW Derate above 25 C 2.4 mW/ C Thermal Resistance, Junction-to-Ambient RqJA 417 C/W 2A M G
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mmbt3906lt1-d.pdf Design, MOSFET, Power
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