ngtb15n120fl2.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

ngtb15n120fl2.pdf Principales características:

NGTB15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage. http //onsemi.com Features Extremely Efficient Trench with Field Stop Technology 15 A, 1200 V TJmax = 175 C VCEsat = 2.0 V Soft Fast Reverse Recovery Diode Eoff = 0.37 mJ Optimized for High Speed Switching 10 ms Short Circuit Capability C These are Pb-Free Devices Typical Applications Solar Inverter G Uninterruptible Power Inverter Supplies (UPS) Welding E ABSOLUTE MAXIMUM RATING