ngtb15n120ih.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

ngtb15n120ih.pdf Principales características:

NGTB15N120IHWG Product Preview IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching applications. 15 A, 1200 V Features VCEsat = 2.10 V Extremely Efficient Trench with Fieldstop Technology Eoff = 0.36 mJ Low Switching Loss Reduces System Power Dissipation C Optimized for Low Losses in IH Cooker Application This is a Pb-Free Device Typical Applications Inductive Heating G Consumer Appliances Soft Switching E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector-emitter voltage VCES 1200 V Collector current IC A @ TC = 25 C 30 @ TC = 100 C 15 Pulsed