ngtb15n60s1eg.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

ngtb15n60s1eg.pdf Principales características:

NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching www.onsemi.com applications. Incorporated into the device is a rugged co-packaged reverse recovery diode with a low forward voltage. 15 A, 650 V Features VCEsat = 1.5 V Low Saturation Voltage Resulting in Low Conduction Loss Low Switching Loss in Higher Frequency Applications C Soft Fast Reverse Recovery Diode 5 ms Short Circuit Capability Excellent Current versus Package Size Performance Density This is a Pb-Free Device G Typical Applications E White Goods Applianc