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ntmfs4c09n.pdf Principales características:

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NTMFS4C09N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 52 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.8 mW @ 10 V 30 V 52 A Compliant 8.5 mW @ 4.5 V Applications D (5-8) CPU Power Delivery DC-DC Converters MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit G (4) Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS 20 V S (1,2,3) Continuous Drain TA = 25 C ID 16.4 A N-CHANNEL MOSFET Current RqJA TA = 80 C 12.3 (Note 1) MARKING Power Dissipation TA = 25 C PD 2.51 W DIAGRAMS RqJA (Note 1) D Continuous Drain TA = 25 C ID 25.3 A S D SO-8 FLAT LEAD Current RqJA 10 s S 4C

 

Keywords - ALL TRANSISTORS. Principales características

 ntmfs4c09n.pdf Design, MOSFET, Power

 ntmfs4c09n.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ntmfs4c09n.pdf Database, Innovation, IC, Electricity

 

 
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