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ntmfs4c09nt1g.pdf Principales características:

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NTMFS4C09N Power MOSFET 30 V, 52 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 5.8 mW @ 10 V Applications 30 V 52 A 8.5 mW @ 4.5 V CPU Power Delivery DC-DC Converters D (5-8) MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V G (4) Gate-to-Source Voltage VGS 20 V Continuous Drain TA = 25 C ID 16.4 A Current RqJA S (1,2,3) TA = 80 C 12.3 (Note 1) N-CHANNEL MOSFET Power Dissipation TA = 25 C PD 2.51 W RqJA (Note 1) MARKING Continuous Drain TA = 25 C ID 25.3 A DIAGRAMS Current RqJA 10 s TA = 80 C 19.0 D (Note 1) S D

 

Keywords - ALL TRANSISTORS. Principales características

 ntmfs4c09nt1g.pdf Design, MOSFET, Power

 ntmfs4c09nt1g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ntmfs4c09nt1g.pdf Database, Innovation, IC, Electricity

 

 
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