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p2n2907a.pdf Principales características:

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P2N2907A Amplifier Transistor PNP Silicon Features These are Pb--Free Devices* http //onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit 2 BASE Collector--Emitter Voltage VCEO --60 Vdc Collector--Base Voltage VCBO --60 Vdc 3 Emitter--Base Voltage VEBO --5.0 Vdc EMITTER Collector Current -- Continuous IC --600 mAdc Total Device Dissipation @ TA =25 C PD 625 mW Derate above 25 C 5.0 mW/ C TO--92 Total Device Dissipation @ TC =25 C PD 1.5 W CASE 29 Derate above 25 C 12 mW/ C STYLE 17 Operating and Storage Junction TJ, Tstg --55 to C Temperature Range +150 1 1 2 2 THERMAL CHARACTERISTICS 3 3 STRAIGHT LEAD BENT LEAD Characteristic Symbol Max Unit BULK PACK TAPE & REEL AMMO PACK Thermal Resistance, Junction to Ambient R JA 200 C/W Thermal Resistance, Junction to Case R JC 83.3 C/W MARKING DIAGRAM Stresses exceeding Maxim

 

Keywords - ALL TRANSISTORS. Principales características

 p2n2907a.pdf Design, MOSFET, Power

 p2n2907a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 p2n2907a.pdf Database, Innovation, IC, Electricity

 

 
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