2sd1304 e.pdf datasheet:

Transistor 2SD1304 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Zener diode built in. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute Maximum Ratings (Ta=25 C) 0.1 to 0.3 Parameter Symbol Ratings Unit 0.4 0.2 Collector to base voltage VCBO 20 3 V Collector to emitter voltage VCEO 20 3 V Emitter to base voltage VEBO 7 V 1 Base JEDEC TO 236 2 Emitter EIAJ SC 59 Peak collector current ICP 200 mA 3 Collector Mini Type Package Collector current IC 100 mA Collector power dissipation PC 200 mW Marking symbol 2A Junction temperature Tj 150 C Internal Connection Storage temperature Tstg 55 +150 C C B E Electrical Characteristics (Ta=25 C) Par