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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N2219; 2N2219A NPN switching transistors 1997 Sep 03 Product specification Supersedes data of 1997 May 07 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors 2N2219; 2N2219A FEATURES PINNING High current (max. 800 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to case High-speed switching DC and VHF/UHF amplification, for 2N2219 only. 1 handbook, halfpage 3 2 DESCRIPTION 2 NPN switching transistor in a TO-39 metal package. PNP complement 2N2905 and 2N2905A. 1 3 MAM317 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 2N2219 - 60 V 2N2219A - 75 V VCEO collector-emit

 

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