bf1100wr 0.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

bf1100wr 0.pdf Principales características:

DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES PINNING Specially designed for use at 9 to 12 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1 s, b source admittance to input capacitance ratio 2 d drain Low noise gain controlled amplifier up to 1 GHz 3g2 gate 2 Superior cross-modulation performance during AGC. 4g1 gate 1 APPLICATIONS d handbook, halfpage VHF and UHF applications such as television tuners and professional communications equipment. 3 4 DESCRIPTION g2 Enhancement type field-effect transistor in a plastic g1 microminiature SOT343R package. The transistor consists of an amplifier MOS-FET