r07ds0353ej rjp30e3dpp.pdf datasheet:

Preliminary Datasheet RJP30E3DPP-M0 R07DS0353EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Apr 15, 2011 Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Package code PRSS0003AF-A) (Package name TO-220FL) C 1. Gate 2. Collector G 3. Emitter 1 2 3 E Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to Emitter voltage VCES 360 V Gate to Emitter voltage VGES 30 V Collector current IC 40 A Collector peak current ic(peak) Note1 250 A Collector dissipation PC Note2 30 W j-c Junction to case thermal impedance 4.17 C/ W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes