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2sd2142k.pdf Principales características:

2SD2142K Transistors High-gain Amplifier Transistor (30V, 0.3A) 2SD2142K Dimensions (Unit mm) Features 1) Darlington connection for a high hFE. SMT3 (DC current gain = 5000 (Min.) at VCE = 3V, IC = 10mA) 2.9 1.1 2) High input impedance. 0.4 0.8 (3) Inner circuit (2) (1) C 0.95 0.95 0.15 1.9 (1)Emitter (2)Base B Each lead has same dimensions (3)Collector E Emitter C Collector E B Base Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCER 30 V Emitter-base voltage VEBO 10 V Collector current IC 0.3 A Collector power dissipation PC 0.2 W Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 30 - -

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