ruh60100m.pdf Principales características:
RUH60100M N-Channel Advanced Power MOSFET Features Pin Description 60V/100A, RDS (ON) =2.6m (Typ.)@VGS=10V D D D D RDS (ON) =3.6m (Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested G Lead Free and Green Devices Available (RoHS Compliant) S S S PIN1 PIN1 PDFN5060 D Applications LED backlighting On board power for server G Synchronous rectification S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25 C Unless Otherwise Noted) VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage 20 TJ Maximum Junction Temperature 150 C TSTG Storage Temperature Range -55 to 150 C IS Diode Continuous Forward Current TC=25 C 50 A Mounted on Large Heat Sink TC=25 C 400 A IDP 300 s Pulse Drain Current Tested TC=25 C 100 Continuous Drain Current
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ruh60100m.pdf Design, MOSFET, Power
ruh60100m.pdf RoHS Compliant, Service, Triacs, Semiconductor
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