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ruh85100m-c.pdf Principales características:

RUH85100M-C N-Channel Advanced Power MOSFET Features Pin Description 85V/100A, RDS (ON) =6.5m (Typ.)@VGS=10V D RDS (ON) =9.5m (Typ.)@VGS=4.5V D Ultra Low On-Resistance D Fast Switching Speed D 100% Avalanche Tested Uses Ruichips advanced RUISGTTM technology G Lead Free and Green Devices (RoHS Compliant) S S S PIN1 DFN5060 D Applications Synchronous Rectification for Flyback Converters PD Adaptors G Charger for Mobile S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25 C Unless Otherwise Noted) VDSS Drain-Source Voltage 85 V VGSS Gate-Source Voltage 20 TJ Maximum Junction Temperature 150 C TSTG Storage Temperature Range -55 to 150 C IS Diode Continuous Forward Current TC=25 C 100 A Mounted on Large Heat Sink TC=25 C 400 A IDP 300 s Pulse Drain Current

Keywords - ALL TRANSISTORS. Principales características

 ruh85100m-c.pdf Design, MOSFET, Power

 ruh85100m-c.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ruh85100m-c.pdf Database, Innovation, IC, Electricity