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stm4435.pdf Principales características:

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Green Product S TM4435 S amHop Microelectronics C orp. J AN.20 2006 P-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 20 @ VG S = -10V -30V -8A S urface Mount Package. 33 @ VG S = -4.5V D D D D 8 7 6 5 S O-8 1 1 2 3 4 S S S G ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) Limit Unit Parameter S ymbol Drain-S ource Voltage VDS 30 V VGS Gate-S ource Voltage 25 V a ID 8 A Drain Current-Continuous @ Tj=25 C b -Pulsed IDM 40 A a 1.7 A Drain-S ource Diode Forward Current IS a Maximum Power Dissipation PD W 2.5 Operating Junction and S torage TJ, TS TG -55 to 150 C Temperature R ange THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambienta R JA 50 C/W 1 S TM4435 ELECTRICAL CHARACT

 

Keywords - ALL TRANSISTORS. Principales características

 stm4435.pdf Design, MOSFET, Power

 stm4435.pdf RoHS Compliant, Service, Triacs, Semiconductor

 stm4435.pdf Database, Innovation, IC, Electricity

 

 

 


 
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