stu09n25 std09n25.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

stu09n25 std09n25.pdf Principales características:

STU09N25 Green Product STD09N25 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Max Rugged and reliable. 250V 7.5A 0.4 @ VGS=10V TO-252 and TO-251 Package. G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Symbol Parameter Units Limit VDS Drain-Source Voltage 250 V VGS Gate-Source Voltage 20 V A TC=25 C 7.5 a d ID Drain Current-Continuous TC=100 C 4.74 A b IDM -Pulsed 25 A TC=25 C 52 W PD Maximum Power Dissipation TC=100 C W 21 Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 C THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case 2.4 C/W R JA Thermal Resistance, Junction-to-Ambient