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irf610a.pdf Principales características:

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 1.169 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 200 Continuous Drain Current (TC=25 o ) C 3.3 ID A Continuous Drain Current (TC=100 oC 2.1 ) IDM Drain Current-Pulsed A 1 10 O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 44 O IAR Avalanche Current 3.3 A 1 O EAR Repetitive Avalanche Energy 1 3.8 mJ O dv/dt Peak Diode Recovery dv/dt 3 5.0 V/ns O Total Power Dissipation (TC=25 o ) C 38 W PD o Linear Derating Factor C 0.31 Operating Junction and TJ

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