irfp254a.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

irfp254a.pdf Principales características:

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 25 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Low RDS(ON) 0.108 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 250 Continuous Drain Current (TC=25 o ) C 25 ID A o C Continuous Drain Current (TC=100 ) 15.9 IDM Drain Current-Pulsed A 1 100 O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 781 O IAR Avalanche Current 25 A 1 O EAR Repetitive Avalanche Energy 1 22.1 mJ O dv/dt Peak Diode Recovery dv/dt 3 4.8 V/ns O Total Power Dissipation (TC=25 oC) 221 W PD Linear Derating Factor W/ o 1.79 C Operating Junction an