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irfp350a.pdf Principales características:

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Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Low RDS(ON) 0.254 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 400 Continuous Drain Current (TC=25 ) 17 ID A Continuous Drain Current (TC=100 ) 10.8 1 IDM Drain Current-Pulsed O 68 A VGS Gate-to-Source Voltage _ V 2 EAS Single Pulsed Avalanche Energy O 1156 mJ 1 IAR Avalanche Current 17 A O EAR Repetitive Avalanche Energy 1 O 20.2 mJ 3 dv/dt Peak Diode Recovery dv/dt O 4.0 V/ns Total Power Dissipation (TC=25 ) 202 W PD Linear Derating Factor W/ 1.61 Operating Junction

 

Keywords - ALL TRANSISTORS. Principales características

 irfp350a.pdf Design, MOSFET, Power

 irfp350a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfp350a.pdf Database, Innovation, IC, Electricity

 

 
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