Todos los transistores

 

irfr210a.pdf Principales características:

irfr210airfr210a

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 1.169 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 200 o Continuous Drain Current (TC=25 C) 2.7 ID A Continuous Drain Current (TC=100 o ) C 1.7 IDM Drain Current-Pulsed 10 A 1 O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 44 mJ O IAR Avalanche Current 2.7 A 1 O EAR Repetitive Avalanche Energy 1 2.6 mJ O 3 dv/dt Peak Diode Recovery dv/dt 5.0 V/ns O Total Power Dissipation (TA=25 oC)* 2.5 W PD Total Power Dissipation (TC=25 o ) C 26 W o Li

 

Keywords - ALL TRANSISTORS. Principales características

 irfr210a.pdf Design, MOSFET, Power

 irfr210a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfr210a.pdf Database, Innovation, IC, Electricity

 

 

 


 
↑ Back to Top
.