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irfr214a.pdf Principales características:

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Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Lower RDS(ON) 1.393 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 250 o Continuous Drain Current (TC=25 C ) 2.2 ID A o Continuous Drain Current (TC=100 C ) 1.4 1 IDM Drain Current-Pulsed 8.5 A O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 61 mJ O IAR Avalanche Current 1 2.2 A O EAR Repetitive Avalanche Energy 1 2.5 mJ O dv/dt Peak Diode Recovery dv/dt 3 4.8 V/ns O Total Power Dissipation (TA=25 oC)* 2.5 W PD Total Power Dissipation (TC=25 oC) 25 W o

 

Keywords - ALL TRANSISTORS. Principales características

 irfr214a.pdf Design, MOSFET, Power

 irfr214a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfr214a.pdf Database, Innovation, IC, Electricity

 

 
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