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sw4n60dc swi4n60dc swd4n60dc.pdf Principales características:

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SW4N60DC N-channel Enhancement mode TO-251/TO-252 MOSFET Features TO-251 TO-252 BVDSS 600V ID 4A High ruggedness RDS(ON) (Typ 2.0 )@VGS=10V RDS(ON) 2.0 Gate Charge (Typ 17nC) Improved dv/dt Capability 1 2 1 2 100% Avalanche Tested 2 3 3 Application LED,Charge 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type Marking Package Packaging 1 SW I 4N60DC SW4N60DC TO251 TUBE 2 SW D 4N60DC SW4N60DC TO252 TUBE Absolute maximum ratings Value Symbol Parameter Unit TO-251 TO-252 VDSS Drain to Source Voltage 600 V Continuous Drain Current (@TC=25oC) 4* A

 

Keywords - ALL TRANSISTORS. Principales características

 sw4n60dc swi4n60dc swd4n60dc.pdf Design, MOSFET, Power

 sw4n60dc swi4n60dc swd4n60dc.pdf RoHS Compliant, Service, Triacs, Semiconductor

 sw4n60dc swi4n60dc swd4n60dc.pdf Database, Innovation, IC, Electricity

 

 
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