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ss8050w.pdf Principales características:

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SS8050W NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-323 FEATURES Collector Dim Min Max 3 3 A 1.800 2.200 Power dissipation 1 1 B 1.150 1.350 2 Base PCM 0.2 W C 0.800 1.000 Collector Current D 0.300 0.400 2 ICM 1.5 A A G 1.200 1.400 Emitter L H 0.000 0.100 Collector-base voltage J 0.100 0.250 3 V(BR)CBO 40 V S Top View B K 0.350 0.500 Operating & storage junction temperature 1 2 L 0.590 0.720 O O Tj, Tstg - 55 C + 150 C S 2.000 2.400 V G V 0.280 0.420 All Dimension in mm C H J D K O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V 40 V (BR)CBO Ic= 100 A I =0 E Collector-emitter breakdown voltage V Ic= 0.1mA I =0 25 V (BR)CEO B Emitter-base breakdown voltage V 5 V (B

 

Keywords - ALL TRANSISTORS. Principales características

 ss8050w.pdf Design, MOSFET, Power

 ss8050w.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ss8050w.pdf Database, Innovation, IC, Electricity

 

 
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