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hfs4n60.pdf Principales características:

hfs4n60hfs4n60

July 2005 BVDSS = 600 V RDS(on) typ HFS4N60 ID = 4.0 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 15 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) GS=10V 100% Avalanche Tested Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 600 V ID Drain Current Continuous (TC = 25 ) 4.0* A Drain Current Continuous (TC = 100 ) 2.5* A IDM Drain Current Pulsed (Note 1) 16* A VGS Gate-Source Voltage 30 V EAS Single Pulsed Avalanche Energy (Note 2) 240 mJ IAR Avalanche Current (Note 1) 4.0 A EAR Repetitive Avalanche Energy (Note 1) 10 mJ dv/dt Peak

 

Keywords - ALL TRANSISTORS. Principales características

 hfs4n60.pdf Design, MOSFET, Power

 hfs4n60.pdf RoHS Compliant, Service, Triacs, Semiconductor

 hfs4n60.pdf Database, Innovation, IC, Electricity

 

 

 


 
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