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hfs4n60fs.pdf Principales características:

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Oct 2016 HFS4N60FS 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 4A Excellent Switching Characteristics RDS(on), Typ 2.6 100% Avalanche Tested Qg, Typ 8.5 nC Single Gauge Package TO-220FS Symbol S D G Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value Unit VDSS Drain-Source Voltage 600 V Drain Current Continuous (TC = 25 ) 4.0 * A ID Drain Current Continuous (TC = 100 ) 2.5 * A IDM Drain Current Pulsed (Note 1) 16 * A VGS Gate-Source Voltage 30 V EAS Single Pulsed Avalanche Energy (Note 2) 70 mJ IAR Avalanche Current (Note 1) 4.0 A EAR Repetitive Avalanche Energy (Note 1) 11 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns 35 W Power Dissipation (TC = 25 ) PD - Derate above 25 0.28 W/ TJ, TSTG Operat

 

Keywords - ALL TRANSISTORS. Principales características

 hfs4n60fs.pdf Design, MOSFET, Power

 hfs4n60fs.pdf RoHS Compliant, Service, Triacs, Semiconductor

 hfs4n60fs.pdf Database, Innovation, IC, Electricity

 

 

 


 
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