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hfw10n60s.pdf Principales características:

hfw10n60shfw10n60s

May 2010 BVDSS = 600 V RDS(on) typ HFW10N60S ID = 9.5 A 600V N-Channel MOSFET D2-PAK FEATURES Originative New Design Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) GS=10V 100% Avalanche Tested Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 600 V ID Drain Current Continuous (TC = 25 ) 9.5 A Drain Current Continuous (TC = 100 ) 5.7 A IDM Drain Current Pulsed (Note 1) 38 A VGS Gate-Source Voltage 30 V EAS Single Pulsed Avalanche Energy (Note 2) 700 mJ IAR Avalanche Current (Note 1) 9.5 A EAR Repetitive Avalanche Energy (Note 1) 15.6 mJ dv/dt Peak Diode

 

Keywords - ALL TRANSISTORS. Principales características

 hfw10n60s.pdf Design, MOSFET, Power

 hfw10n60s.pdf RoHS Compliant, Service, Triacs, Semiconductor

 hfw10n60s.pdf Database, Innovation, IC, Electricity

 

 

 


 
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