Todos los transistores

 

hrd120n10k hru120n10k.pdf Principales características:

hrd120n10k_hru120n10khrd120n10k_hru120n10k

Sep 2015 BVDSS = 100 V RDS(on) typ = 10 HRD120N10K / HRU120N10K ID = 73 A 100V N-Channel Trench MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HRD120N10K HRU120N10K Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 65 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 10 (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 100 V Drain Current Continuous (TC = 25 ) 73 * A ID Drain Current Continuous (TC = 100 ) 51 * A IDM Drain Current Pulsed (Note 1) 200 * A VGS Gate-Source Voltage 25 V EAS Single Pulsed Avalanche Energy (Note 2) 265 mJ EAR Repetitive Avalanche Energy (Note 1) 11 mJ Power Dissipation (TA = 25 )* 3 W PD Power Dissip

 

Keywords - ALL TRANSISTORS. Principales características

 hrd120n10k hru120n10k.pdf Design, MOSFET, Power

 hrd120n10k hru120n10k.pdf RoHS Compliant, Service, Triacs, Semiconductor

 hrd120n10k hru120n10k.pdf Database, Innovation, IC, Electricity

 

 

 


 
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