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MMBTA56 PNP General Purpose Transistor for amplifier applications On special request, these transistors can be manufactured in different pin configurations. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 80 V Collector Emitter Voltage -VCES 80 V Emitter Base Voltage -VEBO 4 V Collector Current -IC 500 mA Power Dissipation Ptot 200 mW O Thermal Resistance, Junction to Ambient R JA 357 C/W O Junction Temperature Tj -55 to +150 C O Storage Temperature Range TStg -55 to +150 C SEMTECH ELECTRONICS LTD. Dated 16/03/2015 Rev 01 MMBTA56 O Characteristics at Ta=25 C Parameter Symbol Min. Max. Unit DC Current Gain at -IC = 10 mA, -VCE = 1 V hFE 100 - - at -IC = 100 mA, -VCE = 1 V hFE 100 - - Collector Cutoff Current -ICBO - 100 nA at -VCB = 80 V Collector Cutoff

 

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