mmbtsc3356q mmbtsc3356r mmbtsc3356s.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

mmbtsc3356q mmbtsc3356r mmbtsc3356s.pdf Principales características:

MMBTSC3356 NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 20 V Collector Emitter Voltage VCEO 12 V Emitter Base Voltage VEBO 3 V Collector Current IC 100 mA Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O Storage Temperature Range TStg - 65 to + 150 C O Characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 10 V, IC = 20 mA Current Gain Group Q hFE 50 - 100 - R hFE 80 - 160 - S hFE 125 - 250 - Collector Cutoff Current ICBO - - 1 A at VCB = 10 V Emitter Cutoff Current IEBO - - 1 A at VEB = 1 V Gain Bandwidth Product fT