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st2sa1213u.pdf Principales características:

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ST 2SA1213U PNP Silicon Epitaxial Planar Transistor for power amplifier and power switching applications The transistor is subdivided into two groups, O and Y, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 2 A Base Current -IB 0.4 A 0.5 Total Power Dissipation Ptot W 1 1) Junction Temperature Tj 150 Storage Temperature Range Tstg - 55 to + 150 1) When mounted on a 250 mm2 X 0.8 t ceramic substrate. Characteristics at Ta = 25 Parameter Symbol Min. Typ. Max. Unit DC Current Gain at -VCE = 2 V, -IC = 500 mA Current Gain Group O hFE 70 - 140 - Y hFE 120 - 240 - at -VCE = 2 V, -IC = 2 A hFE 20 - - - Collector Base Cutoff Current -ICBO - -

 

Keywords - ALL TRANSISTORS. Principales características

 st2sa1213u.pdf Design, MOSFET, Power

 st2sa1213u.pdf RoHS Compliant, Service, Triacs, Semiconductor

 st2sa1213u.pdf Database, Innovation, IC, Electricity

 

 

 


 
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