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irf640.pdf Principales características:

irf640irf640

IRF640 N-Channel MOSFET Transistor FEATURES Static drain-source on-resistance TO-220 RDS(on) 150m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Efficient and reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 18 A D I Drain Current-Single Pulsed 72 A DM P Total Dissipation @T =25 150 W D C T Max. Operating Junction Temperature 175 j Storage Temperature -55 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(ch-c) 1 Channel-to-ambient thermal resistance /W Rth(ch-a) 62 www.slkormicro.com

 

Keywords - ALL TRANSISTORS. Principales características

 irf640.pdf Design, MOSFET, Power

 irf640.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf640.pdf Database, Innovation, IC, Electricity

 

 

 


 
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