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sl4435a.pdf Principales características:

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SL4435A -30V/-10A P-Channel MOSFET Features Product Summary Trench Power LV MOSFET technology VDS RDS(ON) MAX ID MAX High density cell design for Low RDS(ON) 18m @10VD2 S1 -30V -10.5A High Speed switching D1 30m @4.5V D D D Application D Battery protection Power management S Load switch S S G D D D D SOP-8 top view Schematic diagram 4435 Device code XXXXXX Code 4435 XXXXXX G S S S Marking and pin assignment Absolute Maximum Ratings (TA=25 unless otherwise noted) Parameter Symbol Rating Unit Common Ratings (TC=25 C Unless Otherwise Noted) Drain-Source Breakdown Voltage -30 V VDS Gate-Source Voltage 20 V VGS Maximum Junction Temperature 150 C TJ Storage Temperature Range -50 to 155 C TSTG Diode Continuous Forward Current Tc=25 -10 A C IS Mounted on Large Heat Sink 0 Pulse Drain Current Tes

 

Keywords - ALL TRANSISTORS. Principales características

 sl4435a.pdf Design, MOSFET, Power

 sl4435a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 sl4435a.pdf Database, Innovation, IC, Electricity

 

 
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