Todos los transistores

 

2n2907ahr.pdf Principales características:

2n2907ahr2n2907ahr

2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value 1 2 3 BVCEO 60 V TO-18 IC (max) 0.6 A 3 3 HFE at 10 V - 150 mA > 100 4 1 1 2 2 Hermetic packages LCC-3 UB ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid. European preferred part list EPPL Figure 1. Internal schematic diagram Description The 2N2907AHR is a silicon planar PNP transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications. It is available in the JAN qualification system (MIL-PRF19500 compliance) and in the ESCC qualification system (ESCC 5000 compliance). In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Table 1. Device summary Qualification Agency Device Package Radiation level EPPL system

 

Keywords - ALL TRANSISTORS. Principales características

 2n2907ahr.pdf Design, MOSFET, Power

 2n2907ahr.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n2907ahr.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.