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2n5401hr.pdf Principales características:

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2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 BVCEO 150 V 1 1 IC (max) 0.5 A 2 2 3 HFE at 10 V - 150 mA > 60 TO-18 LCC-3 3 Hermetic packages 4 ESCC and JANS qualified 1 Up to 100 krad(Si) low dose rate 2 UB Description Pin 4 in UB is connected to the metallic lid. The 2N5401HR is a silicon planar PNP transistor specifically designed and housed in hermetic Figure 1. Internal schematic diagram packages for aerospace and Hi-Rel applications. It is available in the JAN qualification system (MIL-PRF19500 compliance) and in the ESCC qualification system (ESCC 5000 compliance). In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Table 1. Device summary Qualification Device Agency specification Package Radiation level EPPL sys

 

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 2n5401hr.pdf Design, MOSFET, Power

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