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2SD1047 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 140 V Typical ft = 20 MHz Fully characterized at 125 oC Application Power supply 3 2 1 Description TO-3P The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging 2SD1047 2SD1047 TO-3P Tube April 2011 Doc ID 018729 Rev 1 1/10 www.st.com 10 Electrical ratings 2SD1047 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 200 V VCEO Collector-emitter voltage (IB = 0) 140 V VEBO Emitter-base voltage (IC = 0) 6 V IC Collector current 12 A ICM Collector peak current

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