msc81020.pdf datasheet:
MSC81020RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONS.EMITTER BALLASTED.REFRACTORY/GOLD METALLIZATION.LOW THERMAL RESISTANCE.HERMETIC STRIPAC PACKAGE.P 20 W MIN. WITH 10 dB GAINOUT =@ 1 GHz.230 2L STUD (S016)hermetically sealedORDER CODE BRANDINGMSC81020 81020PIN CONNECTIONDESCRIPTIONThe MSC81020 is a common base hermeticallysealed silicon NPN microwave tranisitor utilizinga fishbone emitter ballasted geometry with a re-fractory/gold metallization system. This device is1. Collector 3. Emitterdesigned for Class C amplifier applications in the2. Base0.4 - 1.2 GHz frequency range.ABSOLUTE MAXIMUM RATINGS (Tcase = 25C)Symbol Parameter Value UnitP Power Dissipation* 35 WDISSIC Device Current* 1.50 AVCC Collector-Supply Voltage* 35 VCT Junction Temperature 200JCT Storage Temperature - 65 to +200
Keywords - ALL TRANSISTORS DATASHEET
msc81020.pdf Design, MOSFET, Power
msc81020.pdf RoHS Compliant, Service, Triacs, Semiconductor
msc81020.pdf Database, Innovation, IC, Electricity
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