msc83301.pdf datasheet:
MSC83301RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.VSWR CAPABILITY @ RATED:1CONDITIONS.HERMETIC STRIPAC PACKAGE.POUT 1.0 W MIN. WITH 7.0 dB GAIN=@ 3.0 GHz.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC83301 83301PIN CONNECTIONDESCRIPTIONThe MSC83301 is a common base hermeticallysealed silicon NPN microwave power transistorutilizing an overlay, emitter site ballasted geome-try with a refractory gold metallization system.This device is capable of withstanding an infiniteload VSWR at any phase angle under rated con-ditions. The MSC83301 is designed for Class Camplifier/oscillator applications in the 1.0 - 3.01. Collector 3. EmitterGHz frequency range.2. Base 4. BaseABSOLUTE MAXIMUM RATINGS (Tcase = 25C)Symbol Parameter Value UnitP Powe
Keywords - ALL TRANSISTORS DATASHEET
msc83301.pdf Design, MOSFET, Power
msc83301.pdf RoHS Compliant, Service, Triacs, Semiconductor
msc83301.pdf Database, Innovation, IC, Electricity
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050