msc83301.pdf datasheet:
MSC83301RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.VSWR CAPABILITY @ RATED:1CONDITIONS.HERMETIC STRIPAC PACKAGE.POUT 1.0 W MIN. WITH 7.0 dB GAIN=@ 3.0 GHz.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC83301 83301PIN CONNECTIONDESCRIPTIONThe MSC83301 is a common base hermeticallysealed silicon NPN microwave power transistorutilizing an overlay, emitter site ballasted geome-try with a refractory gold metallization system.This device is capable of withstanding an infiniteload VSWR at any phase angle under rated con-ditions. The MSC83301 is designed for Class Camplifier/oscillator applications in the 1.0 - 3.01. Collector 3. EmitterGHz frequency range.2. Base 4. BaseABSOLUTE MAXIMUM RATINGS (Tcase = 25C)Symbol Parameter Value UnitP Powe
Keywords - ALL TRANSISTORS DATASHEET
msc83301.pdf Design, MOSFET, Power
msc83301.pdf RoHS Compliant, Service, Triacs, Semiconductor
msc83301.pdf Database, Innovation, IC, Electricity
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